PART |
Description |
Maker |
DS1250Y-100 DS1250Y-70 DS1250ABP- DS1250YP-70-IND |
512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DIP32 GT 6C 2#8 4#16 PIN PLUG 4096k Nonvolatile SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 4096k Nonvolatile SRAM 4096k非易失SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34
|
MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] Maxim Integrated Products, Inc.
|
DS1250YL-70-IND |
4096k Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
M48T251Y M48T251V |
5.0 OR 3.3V, 4096K TIMEKEEPER?SRAM WITH PHANTOM
|
ST Microelectronics
|
DS1350AB DS1350Y |
4096k Nonvolatile SRAM with Battery Monitor
|
MAXIM - Dallas Semiconductor
|
DS1350AB DS1350AB-100 DS1350AB-70 DS1350ABP-100-IN |
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34 4096k Nonvolatile SRAM with Battery Monitor 1024k Nonvolatile SRAM with Battery Monitor
|
Maxim Integrated Products, Inc. DALLAS[Dallas Semiconductor] DALLAS[Dallas Semiconducotr] MAXIM - Dallas Semiconductor
|
DS9034PCX |
Y2KC Nonvolatile Timekeeping RAM 4096k NV SRAM with Phantom Clock 64kB/ Nonvolatile/ Year-2000-Compliant Timekeeping RAM
|
Dallas Semiconducotr
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM SRAM MCP SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3 15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc. White Electronic Designs
|
R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit) Memory>Fast SRAM>Asynchronous SRAM
|
SRAM Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|